The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2011
Filed:
Jun. 21, 2005
Akira Koshiishi, Nirasaki, JP;
Masaru Sugimoto, Nirasaki, JP;
Kunihiko Hinata, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Chishio Koshimizu, Nirasaki, JP;
Ryuji Ohtani, Nirasaki, JP;
Kazuo Kibi, Nirasaki, JP;
Masashi Saito, Nirasaki, JP;
Naoki Matsumoto, Nirasaki, JP;
Manabu Iwata, Nirasaki, JP;
Daisuke Yano, Minami-Alps, JP;
Yohei Yamazawa, Nirasaki, JP;
Hidetoshi Hanaoka, Nirasaki, JP;
Toshihiro Hayami, Nirasaki, JP;
Hiroki Yamazaki, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
Akira Koshiishi, Nirasaki, JP;
Masaru Sugimoto, Nirasaki, JP;
Kunihiko Hinata, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Chishio Koshimizu, Nirasaki, JP;
Ryuji Ohtani, Nirasaki, JP;
Kazuo Kibi, Nirasaki, JP;
Masashi Saito, Nirasaki, JP;
Naoki Matsumoto, Nirasaki, JP;
Manabu Iwata, Nirasaki, JP;
Daisuke Yano, Minami-Alps, JP;
Yohei Yamazawa, Nirasaki, JP;
Hidetoshi Hanaoka, Nirasaki, JP;
Toshihiro Hayami, Nirasaki, JP;
Hiroki Yamazaki, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.