The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
May. 10, 2018
Applied Materials, Inc., Santa Clara, CA (US);
Nagarajan Rajagopalan, Santa Clara, CA (US);
Xinhai Han, Santa Clara, CA (US);
Michael Wenyoung Tsiang, Fremont, CA (US);
Masaki Ogata, San Jose, CA (US);
Zhijun Jiang, Sunnyvale, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Thomas Nowak, Cupertino, CA (US);
Jianhua Zhou, Campbell, CA (US);
Ramprakash Sankarakrishnan, Santa Clara, CA (US);
Amit Kumar Bansal, Milpitas, CA (US);
Jeongmin Lee, Sunnyvale, CA (US);
Todd Egan, Fremont, CA (US);
Edward Budiarto, Fremont, CA (US);
Dmitriy Panasyuk, Santa Clara, CA (US);
Terrance Y. Lee, Oakland, CA (US);
Jian J. Chen, Fremont, CA (US);
Mohamad A. Ayoub, Los Gatos, CA (US);
Heung Lak Park, San Jose, CA (US);
Patrick Reilly, Pleasanton, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Sergey Starik, Kiev, UA;
Ganesh Balasubramanian, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.