The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Sep. 07, 2016
Tokyo Electron Limited, Minato-ku, JP;
Akira Koshiishi, Nirasaki, JP;
Masaru Sugimoto, Nirasaki, JP;
Kunihiko Hinata, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Chishio Koshimizu, Nirasaki, JP;
Ryuji Ohtani, Nirasaki, JP;
Kazuo Kibi, Nirasaki, JP;
Masashi Saito, Nirasaki, JP;
Naoki Matsumoto, Nirasaki, JP;
Yoshinobu Ohya, Nirasaki, JP;
Manabu Iwata, Nirasaki, JP;
Daisuke Yano, Minami-Alps, JP;
Yohei Yamazawa, Nirasaki, JP;
Hidetoshi Hanaoka, Nirasaki, JP;
Toshihiro Hayami, Nirasaki, JP;
Hiroki Yamazaki, Nirasaki, JP;
Manabu Sato, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Minato-ku, JP;
Abstract
A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.