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For the Inventor, By the Inventor

San Jose, CA, United States of America

Zhuang Li

This inventor holds 15 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignee: Applied Materials, Inc.. Active years: 2002-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhuang Li. Retrieved from https://idiyas.com/inventor/zhuang-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 

% Patents Active = 33.3


Average Co-Inventor Count = 5.1

ph-index = 7

Forward Citations = 822(Granted Patents)


Company Filing History:

goldMedal15 out of 14,433 
 
Applied Materials, Inc.
 patents

Years Active: 2002-2015

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15 patents (USPTO):Explore Patents
1. 8992689 - Method for removing halogen-containing residues from substrate (2015-03-31),
2. 8845816 - Method extending the service interval of a gas distribution plate (2014-09-30),
3. 8435419 - Methods of processing substrates having metal materials (2013-05-07),
4. 7799698 - Deposition-selective etch-deposition process for dielectric film gapfill (2010-09-21),
5. 7691753 - Deposition-selective etch-deposition process for dielectric film gapfill (2010-04-06),
6. 7205240 - HDP-CVD multistep gapfill process (2007-04-17),
7. 7159597 - Multistep remote plasma clean process (2007-01-09),
8. 7081414 - Deposition-selective etch-deposition process for dielectric film gapfill (2006-07-25),
9. 7064077 - Method for high aspect ratio HDP CVD gapfill (2006-06-20),
10. 6812153 - Method for high aspect ratio HDP CVD gapfill (2004-11-02),
11. 6667248 - Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers (2003-12-23),
12. 6559052 - Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures (2003-05-06),
13. 6559026 - Trench fill with HDP-CVD process including coupled high power density plasma deposition (2003-05-06),
14. 6524969 - High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers (2003-02-25),
15. 6468927 - Method of depositing a nitrogen-doped FSG layer (2002-10-22),

Title: Zhuang Li: Innovator in Semiconductor Processing

Introduction

Zhuang Li is a prominent inventor based in San Jose, California, known for his significant contributions to the field of semiconductor processing. With a total of 15 patents to his name, he has made remarkable advancements that enhance manufacturing efficiency and reduce contamination in semiconductor fabrication.

Latest Patents

Zhuang Li's latest patents include a method for removing halogen-containing residues from substrates. This innovative approach combines heat-up and plasma abatement steps, which improves manufacturing throughput. Additionally, by controlling the pressure in the abatement chamber, the removal efficiency is further enhanced. Another notable patent is the method extending the service interval of a gas distribution plate. This method aims to reduce contamination by incorporating a purge gas into the chamber during the substrate processing, effectively removing residue gases.

Career Highlights

Zhuang Li has established a successful career at Applied Materials, Inc., where he has been instrumental in developing cutting-edge technologies for the semiconductor industry. His work has not only contributed to the company's success but has also set new standards in the field.

Collaborations

Zhuang has collaborated with several talented individuals, including Padmanabhan Krishnaraj and Kent Rossman. These partnerships have fostered innovation and have led to the development of advanced solutions in semiconductor processing.

Conclusion

Zhuang Li's contributions to semiconductor processing through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the field and drive advancements in manufacturing efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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