The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8435419 B1

PDF
Full Text
Expired
Date of Patent:
May. 07, 2013

Filed:

Jan. 27, 2011
Applicants:

Guowen Ding, San Jose, CA (US);

Herrick NG, Cupertino, CA (US);

Teh-tien Sue, Milpitas, CA (US);

Benjamin Schwarz, San Jose, CA (US);

Zhuang LI, San Jose, CA (US);

Inventors:

Guowen Ding, San Jose, CA (US);

Herrick Ng, Cupertino, CA (US);

Teh-Tien Sue, Milpitas, CA (US);

Benjamin Schwarz, San Jose, CA (US);

Zhuang Li, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of processing substrates having metal layers are provided herein. In some embodiments, a method of processing a substrate comprising a metal layer having a patterned mask layer disposed above the metal layer, the method may include etching the metal layer through the patterned mask layer; and removing the patterned mask layer using a first plasma formed from a first process gas comprising oxygen (O) and a carbohydrate. In some embodiments, a two step method with an additional second process gas comprising chlorine (Cl) or a sulfur (S) containing gas, may provide an efficient way to remove patterned mask residue.


Find Patent Forward Citations

Loading…