The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Jun. 04, 2003
M. Ziaul Karim, San Jose, CA (US);
Bikram Kapoor, Santa Clara, CA (US);
Anchuan Wang, Fremont, CA (US);
Dong Qing LI, Santa Clara, CA (US);
Katsunari Ozeki, Chiba, JP;
Manoj Vellaikal, Santa Clara, CA (US);
Zhuang LI, San Jose, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Bikram Kapoor, Santa Clara, CA (US);
Anchuan Wang, Fremont, CA (US);
Dong Qing Li, Santa Clara, CA (US);
Katsunari Ozeki, Chiba, JP;
Manoj Vellaikal, Santa Clara, CA (US);
Zhuang Li, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes Hduring the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.