The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Oct. 01, 2004
Zhong Qiang Hua, Saratoga, CA (US);
Dong Qing LI, Santa Clara, CA (US);
Zhengquan Tan, Cupertino, CA (US);
Zhuang LI, San Jose, CA (US);
Michael Chiu Kwan, Redwood City, CA (US);
Bruno Geoffrion, San Jose, CA (US);
Padmanabhan Krishnaraj, San Francisco, CA (US);
Zhong Qiang Hua, Saratoga, CA (US);
Dong Qing Li, Santa Clara, CA (US);
Zhengquan Tan, Cupertino, CA (US);
Zhuang Li, San Jose, CA (US);
Michael Chiu Kwan, Redwood City, CA (US);
Bruno Geoffrion, San Jose, CA (US);
Padmanabhan Krishnaraj, San Francisco, CA (US);
Applied Materials, Santa Clara, CA (US);
Abstract
A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH), molecular oxygen (O) and helium.