Cupertino, CA, United States of America

Zhengquan Tan

This inventor holds 23 USPTO granted patents and 9 published patent applications and 1 EPO patent, primarily in Semiconductor Metrology. Top assignees: Applied Materials, Inc., Kla Corporation, Kla Tencor Corporation. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhengquan Tan. Retrieved from https://idiyas.com/inventor/zhengquan-tan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 69.6

 

Average Co-Inventor Count = 4.1

ph-index = 8

Forward Citations = 1,159(Granted Patents)


Location History:

  • Cupertino, CA (US) (2002 - 2023)
  • Milpitas, CA (US) (2022 - 2023)

Company Filing History:


Years Active: 2002-2026

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Areas of Expertise:
Semiconductor Structures
Spectroscopic Metrology
Nanosheet Surface Roughness
Thin Films
HDP-CVD Deposition
Strain Measurement
Optical Measurements
Anisotropic Dielectric Permittivity
Nitrogen Concentration
Remote Plasma Clean Process
Amorphous Carbon Film
Grating Measurements
23 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Zhengquan Tan in Semiconductor Technology

Introduction

Zhengquan Tan, an accomplished inventor based in Cupertino, CA, holds a remarkable portfolio of 21 patents. His innovative work significantly advances the field of semiconductor technology, particularly in the area of optical measurements and metrology. This article highlights his latest patents, career achievements, and professional collaborations.

Latest Patents

Among his noteworthy contributions, Zhengquan Tan's latest patents include groundbreaking technologies for bandgap measurements of patterned film stacks using spectroscopic metrology. This sophisticated spectroscopic metrology system encompasses a tool and a controller that generates a model of a multilayer grating consisting of two or more layers. The model includes geometric parameters and dispersion parameters that are vital for assessing the test layer of the multilayer grating. Through the controller, values of parameters are determined to predict the bandgap of the test layer based on a simulated spectroscopic signal that matches the measured spectroscopic signal within a selected tolerance.

Another significant patent focuses on scatterometry-based methods and systems for measuring strain in semiconductor structures. This innovative approach leverages optical scatterometry measurements to assess the optical properties of transistor channel structures and their relationship to strain. The measurements are conducted on metrology targets designed to mimic partially manufactured real device structures. This method enhances the understanding of uniaxial strain within semiconductor channels and distinguishes its effects from other contributors.

Career Highlights

Zhengquan Tan has contributed his expertise to notable companies including Applied Materials, Inc. and KLA Corporation, where he played a vital role in advancing semiconductor technologies. His extensive background in metrology and optoelectronics reflects his commitment to research and innovation in this dynamic field.

Collaborations

Throughout his career, Zhengquan has collaborated with distinguished professionals such as Houssam Chouaib and DongQing Li. These collaborations have further enriched his work and contributed to the development of innovative technologies in semiconductor measurement and analysis.

Conclusion

Zhengquan Tan’s contributions to the field of semiconductor technology through his patents and professional collaborations underscore his significant impact as an inventor. His pioneering work in optical measurements and strain assessment not only enhances the understanding of semiconductor devices but also drives innovation in the industry. As technology continues to evolve, the influence of inventors like Zhengquan Tan remains pivotal in shaping the future of semiconductor advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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