The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
May. 19, 2000
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4.8 and 11.2 W/cm and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1.0 and 1.8, preferably between 1.2 and 1.4. For damascene applications, the bias power density is less than 3.2 W/cm , preferably 1.6 W/cm , and the flow rate ratio is between 1.2 and 3.0. Using optimized parameters, the thin film has a lower dielectric constant and better adhesion properties than fluorosilicate glass.