The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Sep. 05, 2001
Hichem M'Saad, Santa Clara, CA (US);
Chad Peterson, San Jose, CA (US);
Zhuang Li, San Jose, CA (US);
Anchuan Wang, Fremont, CA (US);
Farhad Moghadam, Saratoga, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm . A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm and less than 2.4 W/cm . The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.