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For the Inventor, By the Inventor

Osan-si, South Korea

Yunseong Lee

USPTO Granted Patents = 49 

 

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 30(Granted Patents)


Location History:

  • Yongin-si, KR (2017 - 2018)
  • Osan, KR (2020 - 2021)
  • Osan-si, KR (2020 - 2024)
  • Busan, KR (2022 - 2024)

Company Filing History:

goldMedal49 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2025

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Areas of Expertise:
Ferroelectric Material
Thin Film Structure
Integrated Circuit
Domain Switching Devices
Complementary Metal Oxide Semiconductor
Neuromorphic Computing
Graphene Quantum Dots
Logic Switching Device
Electronic Devices
Hardmask Composition
Dielectric Material Layer
Semiconductor Device
49 patents (USPTO):Explore Patents
1. 12484287 - Ferroelectric material, and electronic device including the same (2025-11-25),
2. 12457792 - Thin film structure and electronic device including the same (2025-10-28),
3. 12382644 - Thin film structure including dielectric material layer and electronic device employing the same (2025-08-05),
4. 12369361 - Integrated circuit including transistors and a method of manufacturing the same (2025-07-22),
5. 12283629 - Ferroelectric thin-film structure and electronic device including the same (2025-04-21),
6. 12230711 - Electronic device and method of manufacturing the same (2025-02-18),
7. 12224346 - Domain switching devices and methods of manufacturing the same (2025-02-11),
8. 12218217 - Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure (2025-02-04),
9. 12206009 - Electronic devices and methods of manufacturing the same (2025-01-21),
10. 12205951 - Complementary metal oxide semiconductor device (2025-01-21),
11. 12191311 - Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit (2025-01-07),
12. 12176413 - Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same (2024-12-24),
13. 12100749 - Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures (2024-09-24),
14. 12094971 - Electronic device including ferroelectric layer (2024-09-17),
15. 12089416 - Electronic device and method of manufacturing the same (2024-09-10),

Title: Inventor Yunseong Lee: Revolutionizing Technology in Osan-si, KR

Introduction: Yunseong Lee is a visionary inventor based in Osan-si, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Lee holds several patents in the realm of artificial intelligence, robotics, and renewable energy, showcasing his innovative approach to solving complex problems.

Career Highlights: With a career spanning over two decades, Yunseong Lee has worked with top research institutions and tech companies, leading teams to develop cutting-edge solutions that have reshaped industries.

Collaborations: Throughout his career, Lee has collaborated with renowned scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Inventor Yunseong Lee's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and entrepreneurs.

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