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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12382644 B1

PDFFull Text
Date of Patent:
Aug. 05, 2025

Filed:

Sep. 26, 2022

Thin film structure including dielectric material layer and electronic device employing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Taehwan Moon, Suwon-si, KR;

Jinseong Heo, Suwon-si, KR;

Sangwook Kim, Suwon-si, KR;

Yunseong Lee, Osan-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 21/02 (2006.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01); H10K 10/46 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 21/0228 (2013.01); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10D 30/6739 (2025.01); H10D 30/701 (2025.01); H10D 64/01 (2025.01); H10K 10/472 (2023.02); H10K 10/474 (2023.02); H10K 10/478 (2023.02); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H10K 2102/00 (2023.02);
Abstract

Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

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Moon, Taehwan. (2025). Thin film structure including dielectric material layer and electronic device employing the same (U.S. Patent No. 12382644). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12382644

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