The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Apr. 18, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yunseong Lee, Osan-si, KR;
Jinseong Heo, Seoul, KR;
Sangwook Kim, Suwon-si, KR;
Taehwan Moon, Suwon-si, KR;
Sanghyun Jo, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.