The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Aug. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hagyoul Bae, Hanam-si, KR;

Jinseong Heo, Seoul, KR;

Seunggeol Nam, Suwon-si, KR;

Taehwan Moon, Suwon-si, KR;

Yunseong Lee, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 43/27 (2023.01); H10B 51/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/34 (2023.02); H10B 43/27 (2023.02); H10B 51/20 (2023.02);
Abstract

A non-volatile memory device is provided. The nonvolatile memory device includes a metal pillar, a channel layer separated from the metal pillar and surrounding a side surface of the metal pillar, a source arranged on one end of the channel layer, a drain arranged on the other end of the channel layer, a gate insulating layer surrounding a side surface of the channel layer, and a plurality of insulating elements and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer and surrounding a side surface of the gate insulating layer.


Find Patent Forward Citations

Loading…