The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Nov. 29, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yunseong Lee, Osan-si, KR;
Sangwook Kim, Suwon-si, KR;
Sanghyun Jo, Seoul, KR;
Jinseong Heo, Suwon-si, KR;
Hyangsook Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/0228 (2013.01); H01L 29/78391 (2014.09);
Abstract
A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.