Samsung Electronics Co., Ltd.

Yunseong Lee

Jinseong Heo

Sanghyun Jo

Sangwook Kim

Taehwan Moon

Hyeonjin Shin

Seongjun Park

Seunggeol Nam

Keunwook Shin

Hyangsook Lee

Seongjun Jeong

Sangwon Kim

Minsu Seol

Dongwook Lee

Alum Jung

Hagyoul Bae

Dukhyun Choe

Yeonchoo Cho

Kyung-Eun Byun

Woojin Lee

Sanghoon Ahn

Kwanghee Lee

Eunha Lee

Junghoo Shin

An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

Electronic device including ferroelectric thin film structure

A non-volatile memory device is provided. The nonvolatile memory device includes a metal pillar, a channel layer separated from the metal pillar and surrounding a side surface of the metal pillar, a source arranged on one end of the channel layer, a drain arranged on the other end of the channel layer, a gate insulating layer surrounding a side surface of the channel layer, and a plurality of insulating elements and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer and surrounding a side surface of the gate insulating layer.

Nonvolatile memory device and apparatus comprising the same

Provided are a ferroelectric material and an electronic device including same, the ferroelectric material including: a first domain including a first polarization layer which is polarized in a first direction and a first spacer layer disposed adjacent to the first polarization layer; a second domain including a second polarization layer which is polarized in a second direction distinct from the first direction and a second spacer layer disposed adjacent to the second polarization layer; and a structural layer, which is disposed at a domain wall between the first domain and the second domain, and belongs to/has atoms arranged according to a Pbcn space group.

Ferroelectric material, and electronic device including the same

Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfOlayer to form a compound of HfAO(0<x<1, z is a real number). An uppermost layer of the plurality of layers is thickest among the plurality of layers. The first conductive layer contacts the uppermost layer.

Thin film structure and electronic device including the same

Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

Thin film structure including dielectric material layer and electronic device employing the same

An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.

Integrated circuit including transistors and a method of manufacturing the same

Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric layer is spaced apart from the first ferroelectric layer and has a different dielectric constant from the first ferroelectric layer. The first ferroelectric layer and the second ferroelectric layer may be different from each other in terms of the amount of a dopant contained therein, and may exhibit different threshold voltages when applied to transistors.

Ferroelectric thin-film structure and electronic device including the same

Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

Electronic device and method of manufacturing the same

A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.

Domain switching devices and methods of manufacturing the same

A layer structure including a dielectric layer, a method of manufacturing the layer structure, and an electronic device including the layer structure are disclosed. The layer structure including a lower layer, a dielectric layer, and an upper layer sequentially stacked. The dielectric layer includes sequentially stacked first, second, and third layers, wherein one of the first layer or the third layer is a ferroelectric, the other one is an anti-ferroelectric, and the second layer is an oxide layer. In one example, the dielectric layer may further include a fourth layer on the third layer.

Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure

Provided is a semiconductor device including a first semiconductor transistor including a semiconductor channel layer, and a metal-oxide semiconductor channel layer, and having a structure in which a second semiconductor transistor is stacked on the top of the first semiconductor transistor. A gate stack of the second semiconductor transistor and the top of a gate stack of the first semiconductor transistor may overlap by greater than or equal to 90%. The first semiconductor transistor and the second semiconductor transistor may have a similar level of operation characteristics.

Complementary metal oxide semiconductor device

An electronic device includes a seed layer including a two-dimensional (2D) material, and a ferroelectric layer on the seed layer. The ferroelectric layer is configured to be aligned in a direction in which a (111) crystal direction is perpendicular to a top surface of a substrate on which the seed layer is located and/or a top surface of the seed layer.

Electronic devices and methods of manufacturing the same

A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit

A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.

Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same

A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

Growing community of inventors

Osan-si, South Korea

Yunseong Lee