The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Apr. 12, 2024
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sangwook Kim, Seongnam-si, KR;
Yunseong Lee, Osan-si, KR;
Sanghyun Jo, Seoul, KR;
Jinseong Heo, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H01L 21/28 (2025.01); H10D 30/01 (2025.01); H10D 64/68 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/701 (2025.01); H01L 21/28185 (2013.01); H10D 30/0415 (2025.01); H10D 64/685 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/0135 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract
An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.