The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 01, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangwook Kim, Seongnam-si, KR;
Seunggeol Nam, Suwon-si, KR;
Taehwan Moon, Suwon-si, KR;
Kwanghee Lee, Hwaseong-si, KR;
Jinseong Heo, Seoul, KR;
Hagyoul Bae, Hanam-si, KR;
Yunseong Lee, Osan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a semiconductor device including a first semiconductor transistor including a semiconductor channel layer, and a metal-oxide semiconductor channel layer, and having a structure in which a second semiconductor transistor is stacked on the top of the first semiconductor transistor. A gate stack of the second semiconductor transistor and the top of a gate stack of the first semiconductor transistor may overlap by greater than or equal to 90%. The first semiconductor transistor and the second semiconductor transistor may have a similar level of operation characteristics.