Company Filing History:

19 out of 4,519

Sandisk Technologies Inc.

Years Active: 2012-2017

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20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9698149 - Non-volatile memory with flat cell structures and air gap isolation (2017-07-04),

2. 9552991 - Trench vertical NAND and method of making thereof (2017-01-24),

3. 9466644 - Resistance-switching memory cell with multiple raised structures in a bottom electrode (2016-10-11),

4. 9437813 - Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask (2016-09-06),

5. 9379120 - Metal control gate structures and air gap isolation in non-volatile memory (2016-06-28),

6. 9252151 - Three dimensional NAND device with birds beak containing floating gates and method of making thereof (2016-02-02),

7. 9224746 - Inverted-T word line and formation for non-volatile storage (2015-12-29),

8. 9177808 - Memory device with control gate oxygen diffusion control and method of making thereof (2015-11-03),

9. 9165940 - Three dimensional NAND device with silicide containing floating gates and method of making thereof (2015-10-20),

10. 9123890 - Resistance-switching memory cell with multiple raised structures in a bottom electrode (2015-09-01),

11. 9029936 - Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof (2015-05-12),

12. 8987087 - Three dimensional NAND device with birds beak containing floating gates and method of making thereof (2015-03-24),

13. 8946048 - Method of fabricating non-volatile memory with flat cell structures and air gap isolation (2015-02-03),

14. 8928061 - Three dimensional NAND device with silicide containing floating gates (2015-01-06),

15. 8823075 - Select gate formation for nanodot flat cell (2014-09-02),

Title: Innovations and Contributions of Yuan Zhang in Semiconductor Patents

Introduction

Yuan Zhang, based in San Jose, California, is a prolific inventor with a remarkable portfolio of 20 patents. His work primarily focuses on advancements in non-volatile memory technologies, contributing significantly to the semiconductor industry.

Latest Patents

Among Yuan Zhang's latest patents are two notable innovations. The first patent involves a "Non-volatile memory with flat cell structures and air gap isolation." This high-density semiconductor memory enhances gate-coupling and electrical isolation between discrete devices. The invention employs variations in dielectric constants for different materials to ensure adequate inter-gate coupling while protecting against fringing fields and parasitic capacitances. This innovation further incorporates air gaps formed in both column and row directions to enhance electrical isolation.

The second patent, titled "Trench vertical NAND and method of making thereof," presents a method for creating a monolithic three-dimensional NAND string. The process includes stacking alternating layers of two materials over a substrate, etching to create trenches, and layering various dielectrics and semiconductor channels to optimize performance.

Career Highlights

Yuan Zhang has gained valuable experience working with prominent companies, including SanDisk Technologies Inc. and SanDisk 3D LLC. His contributions to these organizations highlight his expertise in semiconductor technologies and memory storage solutions.

Collaborations

Throughout his career, Yuan has collaborated with distinguished professionals, including Vinod Robert Purayath and James K. Kai. Together, they have worked on various projects aimed at pushing the boundaries of semiconductor design and memory efficiency.

Conclusion

Yuan Zhang's inventive mindset and commitment to enhancing semiconductor memory technologies make him a vital figure in the field of innovations. His significant contributions and collaborative efforts continue to shape the future of non-volatile memory, influencing both industry practices and technological advancements.

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1 patent (EPO):

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