The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 26, 2014
Sandisk Technologies Inc., Plano, TX (US);
Henry Chien, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
George Samachisa, San Jose, CA (US);
Henry Chin, Palo Alto, CA (US);
George Matamis, San Jose, CA (US);
Yuan Zhang, San Jose, CA (US);
James Kai, Santa Clara, CA (US);
Vinod Purayath, Santa Clara, CA (US);
Donovan Lee, Santa Clara, CA (US);
SanDisk Technologies, Inc., Plano, TX (US);
Abstract
A monolithic three dimensional NAND string includes a semiconductor channel located over a substrate, a plurality of control gates extending substantially parallel to the major surface of the substrate including a first control gate located in a first device level and a second control gate located in a second device level located over the substrate and below the first device level, a charge storage material including a silicide layer located in the first device level and in the second device level, a blocking dielectric located between the charge storage material and the plurality of control gates, and a tunnel dielectric located between the charge storage material and the semiconductor channel. The tunnel dielectric has a straight sidewall, portions of the blocking dielectric have a clam shape, and each of the plurality of control gates is located at least partially in an opening in the clam-shaped portion of the blocking dielectric.