Donovan Lee

USPTO Granted Patents = 16 (Patent Applications = 1)

Average Co-Inventor Count = 3.6

ph-index = 6

Forward Citations = 203(Granted Patents)

Company Filing History:

15 out of 4,549

Sandisk Technologies Inc.

Years Active: 2014-2017

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9552991 - Trench vertical NAND and method of making thereof (2017-01-24),

2. 9548311 - Non-volatile storage element with suspended charge storage region (2017-01-17),

3. 9543139 - In-situ support structure for line collapse robustness in memory arrays (2017-01-10),

4. 9349740 - Non-volatile storage element with suspended charge storage region (2016-05-24),

5. 9331181 - Nanodot enhanced hybrid floating gate for non-volatile memory devices (2016-05-03),

6. 9252151 - Three dimensional NAND device with birds beak containing floating gates and method of making thereof (2016-02-02),

7. 9230971 - NAND string containing self-aligned control gate sidewall cladding (2016-01-05),

8. 9224746 - Inverted-T word line and formation for non-volatile storage (2015-12-29),

9. 9177808 - Memory device with control gate oxygen diffusion control and method of making thereof (2015-11-03),

10. 9165940 - Three dimensional NAND device with silicide containing floating gates and method of making thereof (2015-10-20),

11. 8987802 - Method for using nanoparticles to make uniform discrete floating gate layer (2015-03-24),

12. 8987087 - Three dimensional NAND device with birds beak containing floating gates and method of making thereof (2015-03-24),

13. 8969153 - NAND string containing self-aligned control gate sidewall cladding (2015-03-03),

14. 8928061 - Three dimensional NAND device with silicide containing floating gates (2015-01-06),

15. 8823075 - Select gate formation for nanodot flat cell (2014-09-02),

Title: The Innovative Mind of Donovan Lee

Introduction

Donovan Lee is a prominent inventor based in Santa Clara, CA, known for his significant contributions to the field of non-volatile memory technology. With a total of 16 patents to his name, he has made remarkable advancements that have influenced the design and functionality of memory devices.

Latest Patents

Among his latest patents is the "Trench Vertical NAND and Method of Making Thereof." This invention outlines a method for creating a monolithic three-dimensional NAND string, which involves a complex process of stacking alternating material layers, etching trenches, and forming various dielectric and semiconductor layers. Another notable patent is the "Non-Volatile Storage Element with Suspended Charge Storage Region." This innovation utilizes suspended charge storage regions to enhance charge retention and reduce parasitic interferences in memory devices, showcasing his expertise in improving memory technology.

Career Highlights

Throughout his career, Donovan has worked with leading companies in the technology sector, including SanDisk Technologies Inc. and SanDisk 3D LLC. His experience in these organizations has allowed him to develop cutting-edge technologies that have had a lasting impact on the industry.

Collaborations

Donovan has collaborated with notable professionals in his field, including James K. Kai and Vinod Robert Purayath. These partnerships have contributed to the successful development of innovative memory solutions.

Conclusion

Donovan Lee's contributions to the field of non-volatile memory technology are significant and continue to shape the future of memory devices. His innovative patents and collaborations highlight his role as a leading inventor in this dynamic industry.

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