The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Feb. 28, 2013
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Donovan Lee, Santa Clara, CA (US);
James Kai, Fremont, CA (US);
Vinod Purayath, Santa Clara, CA (US);
George Matamis, Danville, CA (US);
Steven J. Radigan, Fremont, CA (US);
Assignee:
SanDisk Technologies Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66825 (2013.01); H01L 29/42332 (2013.01); H01L 29/7881 (2013.01); H01L 21/28273 (2013.01); H01L 27/11524 (2013.01);
Abstract
A memory cell including a control gate located over a floating gate region. The floating gate region includes discrete doped semiconducting or conducting regions separated by an insulator and the discrete doped semiconducting or conducting regions have a generally cylindrical shape or a quasi-cylindrical shape.