The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Nov. 12, 2014
Sandisk Technologies Inc., Plano, TX (US);
Henry Chien, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
George Samachisa, San Jose, CA (US);
Henry Chin, Palo Alto, CA (US);
George Matamis, Danville, CA (US);
Yuan Zhang, San Jose, CA (US);
James Kai, Santa Clara, CA (US);
Vinod Purayath, Santa Clara, CA (US);
Donovan Lee, Santa Clara, CA (US);
SANDISK TECHNOLOGIES INC., Plano, TX (US);
Abstract
A method of making a monolithic three dimensional NAND string, including providing a stack of alternating first material layers and second material layers different from the first material layer over a substrate, the stack comprising at least one opening containing a charge storage material comprising a silicide layer, a tunnel dielectric on the charge storage material in the at least one opening, and a semiconductor channel on the tunnel dielectric in the at least one opening, selectively removing the second material layers without removing the first material layers from the stack and forming control gates between the first material layers.