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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9177808 B1

PDFFull Text
Expired
Date of Patent:
Nov. 03, 2015

Filed:

May. 22, 2014

Memory device with control gate oxygen diffusion control and method of making thereof

Applicant:

Sandisk Technologies, Inc., Plano, TX (US);

Inventors:

Vinod R. Purayath, Santa Clara, CA (US);

James Kai, Santa Clara, CA (US);

Donovan Lee, Santa Clara, CA (US);

Akira Matsudaira, San Jose, CA (US);

Yuan Zhang, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES INC., Plano, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

John C Ingham

Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/513 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract

An embodiment relates to a memory device that includes a semiconductor channel, a tunnel dielectric located over the semiconductor channel, a charge storage region located over the tunnel dielectric, a blocking dielectric located over the charge storage region, and a control gate located over the blocking dielectric. An interface between the blocking dielectric and the control gate substantially prevents oxygen diffusion from the blocking dielectric into the control gate.

Find Patent Forward Citations

Purayath, Vinod. (2015). Memory device with control gate oxygen diffusion control and method of making thereof (U.S. Patent No. 9177808). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9177808

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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