The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jul. 23, 2015
Sandisk 3d Llc, Milpitas, CA (US);
George Matamis, San Jose, CA (US);
James K Kai, Santa Clara, CA (US);
Vinod R Purayath, Santa Clara, CA (US);
Yuan Zhang, San Jose, CA (US);
Henry Chien, San Jose, CA (US);
SanDisk Technologies LLC, Plano, TX (US);
Abstract
A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.