The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Jan. 13, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Vinod Robert Purayath, Santa Clara, CA (US);

George Matamis, San Jose, CA (US);

Henry Chien, San Jose, CA (US);

James Kai, Santa Clara, CA (US);

Yuan Zhang, San Jose, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11524 (2017.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/0649 (2013.01);
Abstract

High-density semiconductor memory is provided with enhancements to gate-coupling and electrical isolation between discrete devices in non-volatile memory. The intermediate dielectric between control gates and charge storage regions is varied in the row direction, with different dielectric constants for the varied materials to provide adequate inter-gate coupling while protecting from fringing fields and parasitic capacitances. Electrical isolation is further provided, at least in part, by air gaps that are formed in the column (bit line) direction and/or air gaps that are formed in the row (word line) direction.


Find Patent Forward Citations

Loading…