Tainan, Taiwan

Yu-Lung Shih


Average Co-Inventor Count = 7.8

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2020-2024

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7 patents (USPTO):Explore Patents

Title: Yu-Lung Shih: Innovator in Semiconductor Technology

Introduction

Yu-Lung Shih is a distinguished inventor based in Tainan, Taiwan, known for his significant contributions to the field of semiconductor technology. With a total of seven patents to his name, Yu-Lung has made notable advancements in magnetic technologies, particularly in memory storage devices.

Latest Patents

Among his latest innovations are several patents related to magnetoresistive random access memory (MRAM). One of his prominent patents describes a semiconductor device that includes a first magnetic tunneling junction (MTJ) and a second MTJ situated on a substrate. This design incorporates a first ultra low-k (ULK) dielectric layer applied over both MTJs, with a passivation layer on top of the first ULK dielectric layer, and a secondary ULK dielectric layer positioned on the passivation layer. This intricate structure optimizes the performance and efficiency of semiconductor devices.

Another patent outlines the method for fabricating such semiconductor devices, detailing a systematic process that includes the formation of MTJs and the careful layering of the dielectric materials to enhance device reliability and functionality.

Career Highlights

Yu-Lung Shih is affiliated with United Microelectronics Corporation (UMC), where he continues to push the boundaries of semiconductor innovation. His work has significantly impacted the development of advanced memory technologies critical for modern computing.

Collaborations

In his endeavors, Yu-Lung has collaborated with notable colleagues including Kun-Ju Li and Hsin-Jung Liu. Together, they have successfully combined their expertise to advance research and development in semiconductor technologies, contributing to the evolution of efficient electronic devices.

Conclusion

Yu-Lung Shih stands out as an influential inventor in the semiconductor industry. His patents, particularly in magnetoresistive random access memory, showcase his dedication to innovation and technology advancement. With his continued contributions, Yu-Lung is poised to make further strides in enhancing memory solutions for future applications.

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