The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Jul. 22, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Hsin-Jung Liu, Pingtung County, TW;
Kun-Ju Li, Tainan, TW;
Ang Chan, Taipei, TW;
Chau-Chung Hou, Tainan, TW;
Yu-Lung Shih, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for manufacturing a memory device is provided, the method includes the following steps: firstly, providing a dielectric layer, then simultaneously forming a contact window and an alignment mark trench in the dielectric layer, wherein the contact window exposes a lower metal line, then forming a conductive layer on the surface of the dielectric layer, in the contact window and in the alignment mark trench, performing a planarization step on the conductive layer, and leaving a residue in the alignment mark trench. Subsequently, a nitrogen plasma step (Nplasma) is performed on the dielectric layer, a cleaning step is performed to remove the residue in the alignment mark trench, and a patterned magnetic tunneling junction, MTJ) film is laminated on the contact window.