The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2021
Filed:
Sep. 10, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Fu-Shou Tsai, Keelung, TW;
Yong-Yi Lin, Miaoli County, TW;
Yang-Ju Lu, Changhua County, TW;
Yu-Lung Shih, Tainan, TW;
Ji-Min Lin, Taichung, TW;
Ching-Yang Chuang, Pingtung County, TW;
Kun-Ju Li, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 29/401 (2013.01); H01L 29/4236 (2013.01); H01L 29/42364 (2013.01); H01L 29/42372 (2013.01);
Abstract
The present invention discloses a metal gate process. A sacrificial nitride layer is introduced during the fabrication of metal gates. The gate height can be well controlled by introducing the sacrificial nitride layer. Further, the particle fall-on problem can be effectively solved.