The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Feb. 23, 2023
United Microelectronics Corp., Hsin-Chu, TW;
Kun-Ju Li, Tainan, TW;
Tai-Cheng Hou, Tainan, TW;
Hsin-Jung Liu, Pingtung County, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Chau-Chung Hou, Tainan, TW;
Yu-Lung Shih, Tainan, TW;
Ang Chan, Taipei, TW;
Chih-Yueh Li, Taipei, TW;
Chun-Tsen Lu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer. Preferably, the first ULK dielectric layer includes a first thickness, the passivation layer between the first MTJ and the second MTJ includes a second thickness, the passivation layer on top of the first MTJ includes a third thickness, and the second thickness is greater than the third thickness