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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12543548 B1

PDFFull Text
Date of Patent:
Feb. 03, 2026

Filed:

Oct. 05, 2021

Semiconductor structure and method for forming the same

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ang Chan, Taipei, TW;

Hsin-Jung Liu, Pingtung County, TW;

Kun-Ju Li, Tainan, TW;

Chau-Chung Hou, Tainan, TW;

Fu-Shou Tsai, Keelung, TW;

Yu-Lung Shih, Tainan, TW;

Jhih-Yuan Chen, Kaohsiung, TW;

Chun-Han Chen, Hsinchu, TW;

Wei-Xin Gao, Tainan, TW;

Shih-Ming Lin, Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Yu Chen

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76816 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01); H10B 61/10 (2023.02); H10B 63/80 (2023.02);
Abstract

A semiconductor structure includes a first dielectric layer on a substrate, a conductive structure disposed in the first dielectric layer and including a terminal portion and an extending portion connecting the terminal portion and extending away from the terminal portion, a second dielectric layer disposed on the first dielectric layer, a conductive via through the second dielectric layer and directly contacting the extending portion, and a dummy via through the second dielectric layer and directly contacting the terminal portion. In a cross-sectional view, a width of the dummy via is smaller than 50% of a width of the conductive via.

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Chan, Ang. (2026). Semiconductor structure and method for forming the same (U.S. Patent No. 12543548). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543548

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