The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Oct. 25, 2024
United Microelectronics Corp., Hsin-Chu City, TW;
Fu-Shou Tsai, Keelung City, TW;
Yu-Lung Shih, Tainan City, TW;
Yang-Ju Lu, Changhua County, TW;
Ching-Yang Chuang, Pingtung County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Abstract
A manufacturing method of a semiconductor structure includes following steps. A metal layer is formed above a first region and a second region of a semiconductor substrate and includes a recess above the second region. The recess is lower than a top surface of the metal layer above the first region. An oxide layer is formed on the metal layer. The oxide layer is partly formed above the first region and partly formed in the recess. A first CMP step is performed to the oxide layer. A removing rate of the oxide layer in the first CMP step is higher than that of the metal layer. A part of the oxide layer remains in the recess after the first CMP step. A second CMP step is performed after the first CMP step. The metal layer above the first and the second regions are partially removed by the second CMP step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile