Gyeonggi-do, South Korea

Young Gwang Yoon

This inventor holds 21 USPTO granted patents and 15 published patent applications, primarily in Semiconductor Devices. Top assignee: Skhynix Inc.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Gwang Yoon. Retrieved from https://idiyas.com/inventor/young-gwang-yoon-k1fcjmdw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 57.1

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2023-2026

Loading Chart...
Areas of Expertise:
High-k Gate Dielectric
Vertical Transistor
Silicon Germanium
Contact Plugs
Metal-Rich Oxide
Low-k Insulating Layer
Hybrid Channel Layer
MOS Transistor
3D Fabrication
Horizontal Gate Structure
Multi-Oxide Channel
Silicide Layer
21 patents (USPTO):Explore Patents

Title: Young Gwang Yoon: Innovator in Semiconductor Technology

Introduction

Young Gwang Yoon is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 21 patents. His work focuses on advancing semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of his latest patents is for a semiconductor device that includes a vertical channel pillar having a hybrid channel layer. This innovative device features a word line stack over a substrate, which consists of multiple interlayer insulating layers and word lines that are alternately stacked. The vertical channel pillar passes through the word line stack and comprises a core insulating layer, a channel layer, and a memory layer. The channel layer is particularly noteworthy as it includes both a silicide channel layer and a silicon channel layer.

Another significant patent by Young Gwang Yoon is for a semiconductor device that incorporates a low-k gate side insulating layer. This device features a gate structure that crosses an active region of a substrate, with spacers on both sides of the gate structure. The gate structure includes an interfacial insulating layer, a gate dielectric layer, a gate barrier layer, and gate side insulating layers. The design of the gate dielectric layer is unique, as it has a U-shaped longitudinal cross-sectional shape that surrounds the lower surface and portions of the side surfaces of the gate barrier layer.

Career Highlights

Young Gwang Yoon is currently associated with SK Hynix Inc., a leading semiconductor company known for its innovative products and technologies. His work at SK Hynix has allowed him to contribute to the development of cutting-edge semiconductor devices that enhance performance and efficiency in electronic applications.

Conclusion

Young Gwang Yoon is a notable inventor whose work in semiconductor technology has led to multiple patents and advancements in the field. His contributions continue to shape the future of electronics, making him a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…