The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Mar. 03, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Young Gwang Yoon, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first gate stack and a second gate stack disposed on a substrate. The first gate stack includes a first lower gate insulating layer. The second gate stack includes a second lower gate insulating layer. The first lower gate insulating layer includes silicon oxide with a first dipole material. The second lower gate insulating layer includes silicon oxide with a second dipole material. The first dipole material and the second dipole material are different from each other.
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