The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 15, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young Gwang Yoon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 29/401 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 21/02529 (2013.01); H01L 21/02631 (2013.01); H01L 29/78 (2013.01);
Abstract
Embodiments of the present invention provide a semiconductor device capable of improving both the thermal stability and contact resistance and a method for fabricating the same. According to an embodiment of the present invention, a semiconductor device may comprise: a contact plug over a substrate, wherein the contact plug includes: a silicide layer having a varying carbon content in a film, and a metal material layer over the silicide layer.