The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Dec. 05, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young Gwang Yoon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/667 (2025.01); H10D 30/6211 (2025.01); H10D 64/01318 (2026.01);
Abstract
A semiconductor device includes a gate dielectric layer over a substrate; a lower gate barrier layer over the gate dielectric layer; and a lower gate electrode over the lower gate barrier layer. The lower gate electrode includes at least one metal-rich metal oxide layer.
Yoon, Young. (2026). Semiconductor device including a transistor having a metal-rich metal oxide layer (U.S. Patent No. 12648212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12648212
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile