The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 05, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Young Gwang Yoon, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A 3D semiconductor device includes: a word line stack over a substrate; and a channel pillar vertically penetrating the word line stack. The word line stack includes a word line and an interlayer dielectric layer. The channel pillar includes: a central dielectric layer; a channel layer surrounding a side of the central dielectric layer; a tunneling dielectric layer having a cylinder shape surrounding a side of the channel layer; an inner charge trap layer surrounding a side of the tunneling dielectric layer; a ring-shaped outer charge trap layer surrounding a side of the inner charge trap layer; and a ring-shaped blocking dielectric layer surrounding a side of the outer charge trap layer. The word line and the blocking dielectric layer have substantially the same vertical thickness. The interlayer dielectric layer is in contact with upper and lower surfaces of the outer charge trap layer and the blocking dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile