The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Nov. 02, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Young Gwang Yoon, Gyeonggi-do, KR;
Yun Ik Son, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first gate structure including a first N-type high-k gate dielectric layer, a second gate structure comprising a first P-type high-k gate dielectric layer, a third gate structure including a second N-type high-k gate dielectric layer, and a fourth gate structure including a second P-type high-k gate dielectric layer. The first N-type high-k gate dielectric layer includes an N-type dipole material with a first concentration. The first P-type high-k gate dielectric layer includes a P-type dipole material with a second concentration. The second N-type high-k gate dielectric layer includes the N-type dipole material with a third concentration. The second P-type high-k gate dielectric layer includes the P-type dipole material with a fourth concentration. The first concentration is higher than the third concentration, and the second concentration is higher than the fourth concentration.