Tokyo, Japan

Yoshiyuki Ishigaki

This inventor holds 38 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Technology Corp., Renesas Electronics Corporation. Active years: 1993-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Ishigaki. Retrieved from https://idiyas.com/inventor/yoshiyuki-ishigaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 

% Patents Active = 73.7

Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 457(Granted Patents)


Location History:

  • Itami, JP (1993 - 1996)
  • Hyogo, JP (1994 - 2005)
  • Toyko, JP (2008)
  • Tokyo, JP (2000 - 2013)
  • Kawasaki, JP (2014 - 2016)

Company Filing History:


Years Active: 1993-2016

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Areas of Expertise:
Thin-Film Transistor
Semiconductor Memory
Static Random Access Memory
Memory Device
Fabrication Method
Capacitive Plate
Interconnection
Polycrystalline Silicon
Bipolar Transistor
C-BiCMOS
Insulating Gate Field
Memory Cell Area
38 patents (USPTO):Explore Patents

Title: The Innovative Journey of Yoshiyuki Ishigaki in Semiconductor Technology

Introduction: Yoshiyuki Ishigaki is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 38 patents, Ishigaki has made substantial advancements in the field of memory cell arrays and semiconductor storage devices. His work continues to influence modern electronics and memory architectures.

Latest Patents: One of Ishigaki's latest patents focuses on a semiconductor device that includes a memory cell transistor featuring a floating gate electrode and a control gate electrode. This innovation allows for the formation of a dummy floating gate electrode that is strategically arranged over a surface of a semiconductor substrate. Another notable patent describes a semiconductor storage device that integrates various elements such as a memory cell array, word lines, and bit lines. The architecture laid out in this invention showcases the parallel arrangement of these elements, enhancing the efficiency of data processing and storage in semiconductor devices.

Career Highlights: Throughout his career, Yoshiyuki Ishigaki has been affiliated with prestigious companies such as Mitsubishi Electric Corporation and Renesas Technology Corporation. At these organizations, he has played a vital role in the research and development of cutting-edge technologies in the semiconductor industry, demonstrating his expertise and leadership in innovation.

Collaborations: Ishigaki has collaborated with noteworthy colleagues, including Masahiro Ishida and Hiroki Honda. Their combined efforts have led to several breakthroughs in semiconductor technology, showcasing the power of teamwork in achieving technological advancements.

Conclusion: Yoshiyuki Ishigaki's contributions to semiconductor technology are remarkable and continue to shape the industry. With a strong foundation in innovation and a commitment to pushing the boundaries of technology, Ishigaki remains a key figure in the evolution of memory cell and storage device capabilities. His work not only exemplifies personal achievement but also highlights the collaborative nature of invention in a rapidly advancing field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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