The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jul. 23, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, KR;
Yoshiyuki Ishigaki, Kawasaki, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
In a memory cell array region and a source contact region defined in a surface of a semiconductor substrate, a memory cell transistor including a floating gate electrode and a control gate electrode is formed. In a gate contact region, a dummy floating gate electrode is arranged to partially be superimposed on a dummy element formation region in a two-dimensional view. In a first interlayer insulating film and a second interlayer insulating film covering the memory cell transistor, a contact plug is formed to penetrate the first interlayer insulating film and a via is formed to penetrate a second interlayer insulating film.