The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2004
Filed:
Feb. 13, 2003
Applicant:
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9772 ;
U.S. Cl.
CPC ...
H01L 2/9772 ;
Abstract
An SRAM comprises a memory cell including first and second access nMOS transistors, first and second driver nMOS transistors and first and second load pMOS transistors, polysilicon wires forming gates of the first and second access nMOS transistors and polysilicon wires extending in the same direction as the polysilicon wires for forming gates of the first and second driver nMOS transistors and gates of the first and second load pMOS transistors. The gate widths of the first and second access nMOS transistors and those of the first and second driver nMOS transistors are equalized with each other.