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For the Inventor, By the Inventor

Kyoto, Japan

Yoshihiro Hirota

This inventor holds 22 USPTO granted patents and 1 published patent application, primarily in Semiconductor Manufacturing. Top assignees: Sumitomo Metal Industries, Inc., Tokyo Electron Limited, Ibiden Company Limited. Active years: 1994-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Hirota. Retrieved from https://idiyas.com/inventor/yoshihiro-hirota

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 81.8

Average Co-Inventor Count = 3.5

ph-index = 8

Forward Citations = 163(Granted Patents)


Location History:

  • Osaka, JP (2000)
  • Kyoto, JP (1999 - 2012)
  • Amagasaki, JP (2012)
  • Nirasaki, JP (2011 - 2014)
  • Tokyo, JP (1994 - 2020)

Company Filing History:

goldMedal9 out of 929 
 
Sumitomo Metal Industries, Inc.
 patents
silverMedal9 out of 10,904 
 
Tokyo Electron Limited
 patents
bronzeMedal2 out of 1,483 
 
Ibiden Company Limited
 patents
4. 1 out of 36,684 
 
Nec Corporation
 patents
5. 1 out of 1,051 
 
Tohoku University
 patents
6. 1 out of 159 
 
Yozan Corporation
 patents
7. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1994-2026

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Areas of Expertise:
Semiconductor Device
Phase Change Memory
Electrostatic Capacitance Sensor
Impedance Detection
Capacitor
Silicon Nitride Film
Nonvolatile Memory
Charge Storage Region
Microscopic Capacitance
Capacitance Detection
Level Shift Circuit
Inductive Load Drive
22 patents (USPTO):Explore Patents
1. 12721064 - Manufacturing method for semiconductor device (2026-08-25),
2. 10748782 - Method of manufacturing semiconductor device (2020-08-18),
3. 8687405 - Phase change memory and method for fabricating phase change memory (2014-04-01),
4. 8318614 - Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus (2012-11-27),
5. 8258571 - MOS semiconductor memory device having charge storage region formed from stack of insulating films (2012-09-04),
6. 8247289 - Capacitor and manufacturing method thereof (2012-08-21),
7. 8241982 - Semiconductor device manufacturing method (2012-08-14),
8. 7897498 - Method for manufacturing semiconductor device (2011-03-01),
9. 7742277 - Dielectric film capacitor and method of manufacturing the same (2010-06-22),
10. 7161360 - Electrostatic capacitance sensor, electrostatic capacitance sensor component, object mounting body and object mounting apparatus (2007-01-09),
11. 6828806 - Electrostatic capacitance sensor, electrostatic capacitance sensor component, object mounting body and object mounting apparatus (2004-12-07),
12. 6756790 - Impedance detection circuit, impedance detection device, and impedance detection method (2004-06-29),
13. 6373264 - Impedance detection apparatus and method of physical variable (2002-04-16),
14. 6348809 - Microscopic capacitance measurement system and probing system (2002-02-19),
15. 6335642 - Impedance-to-voltage converter (2002-01-01),

Title: Innovator Yoshihiro Hirota: Pioneering Advances in Semiconductor Technology

Introduction

Yoshihiro Hirota, based in Kyoto, Japan, is a prominent inventor recognized for his significant contributions to semiconductor technology. With an impressive portfolio of 20 patents, Hirota has been instrumental in developing methods that enhance the manufacturing processes and design of semiconductor devices.

Latest Patents

Among his latest innovations are two notable patents. The first, titled "Method of Manufacturing Semiconductor Device," outlines a sophisticated technique for processing substrates. This method includes embedding a polymer with a urea bond in a recess formed on the substrate. The process involves several steps, including applying a polymerization material from above a sacrificial film, forming a polymer film, and subsequently removing the sacrificial film while retaining the embedded polymer in the recess.

The second patent, "Phase Change Memory and Method for Fabricating Phase Change Memory," pertains to a phase change memory device. This device comprises an insulating layer over a substrate, along with electrode layers, connection electrodes, and a phase change portion strategically positioned to optimize functionality. This invention aims to improve memory device efficiency and reliability.

Career Highlights

Hirota has made remarkable strides in his career, contributing his expertise to reputable companies like Sumitomo Metal Industries, Inc. and Tokyo Electron Limited. His work has not only advanced semiconductor technology but has also led to practical applications in various electronic devices, influencing industries on a global scale.

Collaborations

Throughout his journey, Hirota has collaborated with notable colleagues, including Toshiyuki Matsumoto and Muneo Harada. These collaborations have fostered an environment of innovation, allowing for the sharing of ideas and expertise that have propelled the field of semiconductor technology forward.

Conclusion

Yoshihiro Hirota's inventive spirit and dedication to the field of semiconductor manufacturing position him as a leading figure in technological advancements. His patents not only reflect his creativity and skill but also serve as a foundation for future innovations in the semiconductor industry. As technology continues to evolve, inventors like Hirota will play a crucial role in shaping the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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