The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Nov. 29, 2005
Glenn Gale, Tokyo-To, JP;
Yoshihiro Hirota, Nirasaki, JP;
Yusuke Muraki, Nirasaki, JP;
Genji Nakamura, Tsukuba, JP;
Masato Kushibiki, Nirasaki, JP;
Naoki Shindo, Nirasaki, JP;
Akitaka Shimizu, Nirasaki, JP;
Shigeo Ashigaki, Nirasaki, JP;
Yoshihiro Kato, Nirasaki, JP;
Glenn Gale, Tokyo-To, JP;
Yoshihiro Hirota, Nirasaki, JP;
Yusuke Muraki, Nirasaki, JP;
Genji Nakamura, Tsukuba, JP;
Masato Kushibiki, Nirasaki, JP;
Naoki Shindo, Nirasaki, JP;
Akitaka Shimizu, Nirasaki, JP;
Shigeo Ashigaki, Nirasaki, JP;
Yoshihiro Kato, Nirasaki, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.