The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Aug. 23, 2006
Applicants:

Yoshiki Yamanishi, Sanda, JP;

Muneo Harada, Nishinomiya, JP;

Takahiro Kitano, Kumamoto, JP;

Tatsuzo Kawaguchi, Sendai, JP;

Yoshihiro Hirota, Kyoto, JP;

Kinji Yamada, Tokyo, JP;

Tomotaka Shinoda, Tokyo, JP;

Katsuya Okumura, Tokyo, JP;

Shuichi Kawano, Kawasaki, JP;

Inventors:

Yoshiki Yamanishi, Sanda, JP;

Muneo Harada, Nishinomiya, JP;

Takahiro Kitano, Kumamoto, JP;

Tatsuzo Kawaguchi, Sendai, JP;

Yoshihiro Hirota, Kyoto, JP;

Kinji Yamada, Tokyo, JP;

Tomotaka Shinoda, Tokyo, JP;

Katsuya Okumura, Tokyo, JP;

Shuichi Kawano, Kawasaki, JP;

Assignee:

Ibiden Co., Ltd., Gifu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/20 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.


Find Patent Forward Citations

Loading…