The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Mar. 25, 2008
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Hirota, Amagasaki, JP;
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Hirota, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A Plasma processing apparatus () introduces microwaves into a chamber () by a plane antenna () which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber () by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.