The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Jun. 20, 2008
Tetsuo Endoh, Sendai, JP;
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Hirota, Amagasaki, JP;
Tetsuo Endoh, Sendai, JP;
Masayuki Kohno, Amagasaki, JP;
Tatsuo Nishita, Amagasaki, JP;
Minoru Honda, Amagasaki, JP;
Toshio Nakanishi, Amagasaki, JP;
Yoshihiro Hirota, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
Abstract
The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory deviceincludes a first insulating filmand fifth insulating filmhaving large bandgapsand, a third insulating filmhaving the smallest bandgap, and a second insulating filmand fourth insulating filminterposed between the third insulating filmand the first and fifth insulating filmsand, respectively, and having intermediate bandgapsand