The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Oct. 19, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tatsuya Yamaguchi, Nirasaki, JP;

Reiji Niino, Nirasaki, JP;

Makoto Fujikawa, Nirasaki, JP;

Yoshihiro Hirota, Tokyo, JP;

Rong Yang, Tokyo, JP;

Tomonari Yamamoto, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); C23C 16/458 (2006.01); C23C 16/48 (2006.01); C23C 16/02 (2006.01); H01L 21/3213 (2006.01); H01L 27/108 (2006.01); H01L 21/67 (2006.01); H01L 21/3105 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); C23C 16/0245 (2013.01); C23C 16/4584 (2013.01); C23C 16/481 (2013.01); H01L 21/02118 (2013.01); H01L 21/02271 (2013.01); H01L 21/02282 (2013.01); H01L 21/266 (2013.01); H01L 21/31058 (2013.01); H01L 21/31122 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/32134 (2013.01); H01L 21/6715 (2013.01); H01L 21/76808 (2013.01); H01L 27/1085 (2013.01); H01L 29/66795 (2013.01);
Abstract

There is provided a method of manufacturing a semiconductor device by processing a substrate, which includes: embedding a polymer having a urea bond in a recess formed in the substrate by supplying a material for polymerization from above a sacrificial film to the substrate and forming a polymer film made of the polymer having the urea bond, wherein a surface of the substrate is covered with the sacrificial film, the recess including an opening of the sacrificial film that is formed by a patterning; removing the polymer film formed on the sacrificial film while leaving the polymer embedded in the recess; removing the sacrificial film in a state in which the polymer is embedded in the recess; and subsequently, removing the polymer embedded in the recess.


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