Company Filing History:

23 out of 6,228

Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

patents

Years Active: 2003-2016

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28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9419131 - Semiconductor device having vertical channel transistor and method for fabricating the same (2016-08-16),

2. 9165924 - Vertical channel type nonvolatile memory device and method for fabricating the same (2015-10-20),

3. 9064854 - Semiconductor device with gate stack structure (2015-06-23),

4. 8963205 - Method for fabricating a semiconductor device (2015-02-24),

5. 8759906 - Semiconductor device having vertical channel transistor and method for fabricating the same (2014-06-24),

6. 8441079 - Semiconductor device with gate stack structure (2013-05-14),

7. 8330215 - Transistor including bulb-type recess channel and method for fabricating the same (2012-12-11),

8. 8319341 - Semiconductor device with gate structure (2012-11-27),

9. 8241974 - Nonvolatile memory device with multiple blocking layers and method of fabricating the same (2012-08-14),

10. 8237220 - Semiconductor device with vertical channel transistor (2012-08-07),

11. 8048742 - Transistor including bulb-type recess channel and method for fabricating the same (2011-11-01),

12. 8039337 - Nonvolatile memory device with multiple blocking layers and method of fabricating the same (2011-10-18),

13. 8008178 - Method for fabricating semiconductor device with an intermediate stack structure (2011-08-30),

14. 7968912 - Semiconductor device and method for fabricating the same (2011-06-28),

15. 7928493 - Nonvolatile memory device with multiple blocking layers and method of fabricating the same (2011-04-19),

Title: Yong-Soo Kim: Innovator in Semiconductor Technology

Introduction: Yong-Soo Kim, a prominent inventor based in Ichon-shi, South Korea, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 28 patents, he has become a key figure in the advancement of nonvolatile memory devices and vertical channel transistor structures.

Latest Patents: Among his latest inventions, Yong-Soo Kim developed a semiconductor device that features a vertical channel transistor along with a novel fabrication method. This device comprises a substrate and multiple pillar structures, where each pillar includes an active component surrounded by a gate electrode. Notably, he also created a vertical channel type nonvolatile memory device which employs a systematic method to form channels from a semiconductor substrate, utilizing alternating layers of sacrificial and dielectric materials to achieve optimal device performance.

Career Highlights: Yong-Soo Kim’s career has been marked by his tenure at leading semiconductor companies, including Hynix Semiconductor Inc. and SK Hynix Inc. His innovations in semiconductor fabrication methods have not only broadened the capabilities of memory devices but have also paved the way for advancements in various electronic applications.

Collaborations: Throughout his career, Yong-Soo Kim has collaborated with notable professionals in the field, including Heung-Jae Cho and Kwan-Yong Lim. These partnerships have facilitated the sharing of expertise and fostered creativity, leading to groundbreaking inventions that have strengthened the semiconductor industry.

Conclusion: Yong-Soo Kim stands out as a key innovator in the semiconductor sector, with a strong emphasis on vertical channel transistors and nonvolatile memory devices. His contributions reflect a deep commitment to advancing technology, showcasing how innovation can drive progress in the electronics domain. As he continues to develop new solutions, the impact of his work will be felt across various industries for years to come.

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