The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Aug. 23, 2010
Min-gyu Sung, Ichon-shi, KR;
Hong-seon Yang, Ichon-shi, KR;
Heung-jae Cho, Ichon-shi, KR;
Yong-soo Kim, Ichon-shi, KR;
Kwan-yong Lim, Ichon-shi, KR;
Min-Gyu Sung, Ichon-shi, KR;
Hong-Seon Yang, Ichon-shi, KR;
Heung-Jae Cho, Ichon-shi, KR;
Yong-Soo Kim, Ichon-shi, KR;
Kwan-Yong Lim, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.