Ichon-shi, South Korea

Heung-Jae Cho

USPTO Granted Patents = 60 

Average Co-Inventor Count = 3.3

ph-index = 9

Forward Citations = 312(Granted Patents)

Forward Citations (Not Self Cited) = 309(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kyoungki-do, KR (2006 - 2009)
  • Ichon-si, KR (2010)
  • Icheon-si, KR (2011 - 2012)
  • Icon-shi, KR (2013)
  • Ichon-shi, KR (2003 - 2015)
  • Gyeonggi-do, KR (2013 - 2016)

Company Filing History:


Years Active: 2003-2016

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Areas of Expertise:
Semiconductor Device
Vertical Channel Transistor
Nonvolatile Memory Device
Buried Bitline
Gate Stack Structure
Dual Polysilicon Gate
Fin Transistor
Recess Gate
Bulb-Type Recess Channel
Multiple Blocking Layers
Barrier Metal Layer
60 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Heung-Jae Cho

Introduction: Heung-Jae Cho, a talented inventor hailing from Ichon-shi, South Korea, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Heung-Jae Cho holds several patents in the areas of electronics and telecommunications, showcasing his expertise and creativity in developing cutting-edge solutions for modern challenges.

Career Highlights: Throughout his career, Heung-Jae Cho has demonstrated a keen ability to identify gaps in the market and create inventive solutions to address them. His innovative spirit and dedication to excellence have earned him recognition as a pioneer in his field.

Collaborations: Heung-Jae Cho has collaborated with leading technology companies and research institutions to further his inventions and bring them to market. His partnerships have been instrumental in the success of his projects and have helped solidify his reputation as a visionary inventor.

Conclusion: Heung-Jae Cho's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions have not only advanced the field but have also inspired future generations of inventors to push the boundaries of what is possible.

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